Toward Simultaneous Achievement of Outstanding Durability and Photoelectrochemical Reaction in Cu₂O Photocathodes via Electrochemically Designed Resistive Switching (Adv. Energy Mater. 39/2021)

Resistive Switching In article number 2101905, Hyung Koun Cho and co-workers solve the trade-off issue between photo-charge transport stability originating from use of insulating protection layers. The electrochemical forming process suggested for TiO2 layer on photocathodes draws inspiration typical resistive switching behaviors in resistive-type memory with metal/insulator/metal (MIM) structures. From filament selective Pt-photoelectrodeposition filaments, Cu2O/AZO/TiO2 exhibit an unprecedented photocurrent density open-circuit potential produce vigorous hydrogen oxygen evolution.